| PART |
Description |
Maker |
| W29GL064CB7S W29GL064CH7B W29GL064CL7B W29GL064CT7 |
64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
| V826664G24S |
512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64
|
Mosel Vitelic Corp
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
http://
|
| V54C3256 V54C3256804VS V54C3256404VS V54C3256404VT |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| IBM13M64734CCA |
64M x 72 2-Bank Registered/Buffered SDRAM Module(64M x 72 2组寄缓冲同步动态RAM模块) 64米72 2，银行注缓冲内存模组4米72 2组寄缓冲同步动态内存模块）
|
International Business Machines, Corp.
|
| W29GL064CL7S W29GL064CH7S |
64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
| EBD52UC8AKDA-7B EBD52UC8AKDA EBD52UC8AKDA-6B EBD52 |
512MB DDR SDRAM SO DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| RT9266 RT9266CE |
Tiny Package, High Efficiency, Step-up DC/DC Converter
Input Volt. Range(V) = 1~6.5 ;; Output Volt. Range(V) = Adjustable ;;
|
RICHTEK
|
| KM23C64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IDT72V36100 IDT72V36100L10PF IDT72V36100L15PF IDT7 |
3.3 VOLT HIGH-DENSITY SUPERSYNC⑩ II 36-BIT FIFO
3.3 VOLT HIGH-DENSITY SUPERSYNC II 36-BIT FIFO
|
IDT[Integrated Device Technology]
|
| IDT72V295 IDT72V2105 IDT72V2105L10PF IDT72V2105L15 |
128K x 18 SuperSync FIFO, 3.3V
3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO 131,072 x 18 262,144 x 18
3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO?
|
IDT[Integrated Device Technology]
|
